Ge Shunhao, Sang Dandan, Zou Liangrui, Yao Yu, Zhou Chuandong, Fu Hailong, Xi Hongzhu, Fan Jianchao, Meng Lijian, Wang Cong
Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China.
Nanomaterials (Basel). 2023 Mar 23;13(7):1141. doi: 10.3390/nano13071141.
Titanium dioxide (TiO) is a kind of wide-bandgap semiconductor. Nano-TiO devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.
二氧化钛（TiO₂）是一种宽带隙半导体。纳米二氧化钛器件由于其量子限制效应、高吸收系数、高比表面积、可调节带隙等因素，呈现出尺寸依赖性和新颖的光电性能。由于其优异的电子性能、丰富的储量和高性价比，它们被广泛应用于各种应用领域，如存储器、传感器和光电二极管。本文概述了基于纳米结构二氧化钛的光电器件应用的最新进展。考虑了各种复杂器件，如传感器、光电探测器、发光二极管（LED）、存储应用和场效应晶体管（FET）。这篇对基于二氧化钛的光电器件近期发现的综述，连同总结性综述和预测，对研究人员在光电子应用中过渡金属氧化物的发展具有重要意义。
