Institut des Sciences et Ingénierie Chimiques, Ecole Polytechnique Fédérale de Lausanne, Switzerland.
Adv Mater. 2012 May 22;24(20):2699-702. doi: 10.1002/adma.201104868. Epub 2012 Apr 17.
A 2-nm thick Nb(2)O(5) underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.
通过原子层沉积方法沉积的 2nm 厚的 Nb(2)O(5) 下电极可以通过抑制电子反向注入来提高超薄赤铁矿薄膜的电荷分离效率和光电压。在 400nm 处,光电流效率高达 40%,这是赤铁矿光阳极的最高值之一,相对于 RHE 为 +1.43V。