Sandia National Laboratories, MS9161, Livermore, California 94551, USA.
ACS Nano. 2012 May 22;6(5):4494-9. doi: 10.1021/nn301302n. Epub 2012 May 1.
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube-metal contacts, and should be useful in the optimization of high-performance carbon nanotube electronics.
我们使用数值模拟分析了最近有关钯接触短通道碳纳米管场效应晶体管的实验测量结果。我们表明，栅极强烈调制了接触特性，这种效应与肖特基势垒碳纳米管晶体管中观察到的效应不同。栅极对接触的这种调制使得短通道能够实现更好的亚阈值摆幅和改进的缩放行为。这些结果进一步阐明了碳纳米管-金属接触的行为，对于优化高性能碳纳米管电子器件应该是有用的。
