Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA.
Nanotechnology. 2012 Jun 1;23(21):215202. doi: 10.1088/0957-4484/23/21/215202.
We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.
我们构建并测量了纳米级氧化铌交叉点器件的动态电流随时间的变化行为，该器件表现出了阈值切换（电流控制的负微分电阻）。发现 110×110nm(2)器件的开关速度为 Δt(ON) = 700 ps 和 Δt(OFF) = 2:3 ns，而开关能量约为 100 fJ。我们基于热驱动的绝缘-金属相变的焦耳加热率推导出了一个新的动力学模型，该模型准确地再现了实验结果，并利用该模型估算了这种器件的开关时间和能量缩放行为，直至 10nm 尺度。这些结果表明，阈值开关在混合 CMOS 纳米电子电路中可能具有实际意义。
