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智能氧化铜纳米晶体:合成、表征、电化学及强效抗菌活性

Smart copper oxide nanocrystals: synthesis, characterization, electrochemical and potent antibacterial activity.

作者信息

Hassan M Shamshi, Amna Touseef, Yang O-Bong, El-Newehy Mohamed H, Al-Deyab Salem S, Khil Myung-Seob

机构信息

Department of Organic Materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea.

出版信息

Colloids Surf B Biointerfaces. 2012 Sep 1;97:201-6. doi: 10.1016/j.colsurfb.2012.04.032. Epub 2012 Apr 28.

Abstract

We report herein the synthesis and characterization of novel CuO nanocrystals and their electrochemical and potent antibacterial activity. The utilized CuO nanocrystals were prepared by wet chemical method using copper acetate and hexamethylenetetramine (HMTA) as precursors. The physicochemical properties of the synthesized CuO nanocrystals having size ~6 nm were determined by X-ray diffractometer (XRD), energy dispersive X-ray analysis (EDX), transmission electron microscopy (TEM) and ultra violet-visible (UV-Vis) spectroscopy. The antibacterial study was carried out by minimum inhibitory concentration (MIC) using E. coli as model organism. The MIC of the CuO nanocrystals was found to be 2.5 μg/ml and the TEM analysis reveals that CuO nanocrystals caused disturbance to the cell wall which led to the irreversible damage to the cell envelope eventually leading to cell death. Furthermore, mechanism of bactericidal action of novel CuO nanocrystals is discussed in the light of our findings. Additionally, the synthesized CuO nanocrystals were applied as electrode material for supercapacitor. The specific capacitance of CuO nanocrystals measured at a potential scan rate of 5 mV/s was as high as 164.9 F g(-1).

摘要

我们在此报告新型氧化铜纳米晶体的合成、表征及其电化学和强效抗菌活性。所使用的氧化铜纳米晶体通过湿化学方法制备,以醋酸铜和六亚甲基四胺(HMTA)作为前驱体。通过X射线衍射仪(XRD)、能量色散X射线分析(EDX)、透射电子显微镜(TEM)和紫外可见(UV-Vis)光谱法测定了尺寸约为6纳米的合成氧化铜纳米晶体的物理化学性质。以大肠杆菌为模式生物,通过最低抑菌浓度(MIC)进行抗菌研究。发现氧化铜纳米晶体的MIC为2.5微克/毫升,TEM分析表明氧化铜纳米晶体对细胞壁造成干扰,最终导致细胞膜不可逆转的损伤,从而导致细胞死亡。此外,根据我们的研究结果讨论了新型氧化铜纳米晶体的杀菌作用机制。此外,合成的氧化铜纳米晶体被用作超级电容器的电极材料。在5毫伏/秒的电位扫描速率下测得的氧化铜纳米晶体的比电容高达164.9 F g(-1)。

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