Kriegner D, Persson J M, Etzelstorfer T, Jacobsson D, Wallentin J, Wagner J B, Deppert K, Borgström M T, Stangl J
Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria.
Thin Solid Films. 2013 Sep 30;543(100):100-105. doi: 10.1016/j.tsf.2013.02.112.
In this work the structure of ternary Ga In P nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.
在这项工作中，对三元GaInP纳米线的结构进行了化学成分和均匀性方面的研究。纳米线通过金属有机气相外延生长。为了研究几个横向长度尺度上的整体涨落，对X射线衍射倒易空间图进行了分析。数据显示，整个样品以及纳米线中的材料成分存在复杂的变化，变化幅度约为20%。利用现代同步辐射源，其光束尺寸可达几十微米，使我们能够通过在不同位置记录衍射图案来研究沿样品的成分梯度。此外，在X射线能量色散光谱测量中，还发现单根纳米线内部也存在成分变化。
