Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Nano Lett. 2012 Jun 13;12(6):2784-91. doi: 10.1021/nl204562j. Epub 2012 Jun 1.
We present a method for synthesizing MoS(2)/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, (1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS(2) on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS(2) flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS(2) film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS(2)/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.
我们提出了一种利用石墨烯覆盖的铜箔作为生长模板合成 MoS(2)/Graphene 杂化异质结构的方法。与其他最近的报道相比,(1,2)该方法所需的生长温度低得多,仅为 400°C。在石墨烯表面化学气相沉积 MoS(2) 会导致单晶六方片状物的形成,其典型的横向尺寸范围从几百纳米到几微米。前驱体(硫代钼酸铵)连同溶剂一起在室温下通过载气输送到石墨烯表面,然后进行后退火。在高温下,前驱体通过热分解自组装成在石墨烯表面外延生长的 MoS(2) 薄片。在石墨烯表面上输送更多的前驱体,可以得到连续的 MoS(2) 石墨烯薄膜。这种简单的化学气相沉积方法为石墨烯异质结构的合成和石墨烯的表面功能化提供了一种独特的方法。所合成的二维 MoS(2)/Graphene 杂化物在开发新型光电子器件以及各种新型可合成化合物作为催化剂方面具有巨大的潜力。