Yuan Guowen, Liu Weilin, Huang Xianlei, Wan Zihao, Wang Chao, Yao Bing, Sun Wenjie, Zheng Hang, Yang Kehan, Zhou Zhenjia, Nie Yuefeng, Xu Jie, Gao Libo
National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Nat Commun. 2023 Sep 6;14(1):5457. doi: 10.1038/s41467-023-41296-5.
High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.
高质量的基于石墨烯的范德华超晶格对于研究物理性质和开发功能器件至关重要。然而,实现具有可控扭转角的均匀晶圆级基于石墨烯的超晶格具有挑战性。在此,我们提出一种用于制造晶圆级石墨烯和基于石墨烯的超晶格的平面到平面转移方法。通过具有最佳润湿角的两步旋转辅助脱水程序去除石墨烯与衬底之间的水溶液。进一步采用质子辅助处理来清洁石墨烯表面和界面,这也使石墨烯解耦并中和掺杂水平。通过调整不同层之间的宏观堆叠角,通过它们的晶圆平面精确控制扭转角。转移的薄膜在晶圆尺度上表现出最小的缺陷、均匀的形态和均匀的电学性质。即使在室温下,在具有厘米级线宽的石墨烯薄膜中也观察到了稳健的量子霍尔效应。我们的堆叠转移方法可以促进基于石墨烯的范德华超晶格的制造,并加速功能器件的应用。