Wang Jen-Cheng, Cheng Fang-Ching, Liang Yu-Ting, Chen Hung-Ing, Tsai Chung-Yuan, Fang Chia-Hui, Nee Tzer-En
Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, 333, Taiwan.
Nanoscale Res Lett. 2012 May 30;7(1):270. doi: 10.1186/1556-276X-7-270.
In recent years, zinc oxide (ZnO) has become one of the most popular research materials due to its unique properties and various applications. ZnO is an intrinsic semiconductor, with a wide bandgap (3.37 eV) and large exciton binding energy (60 meV) making it suitable for many optical applications. In this experiment, the simple hydrothermal method is used to grow indium-doped ZnO nanostructures on a silicon wafer, which are then annealed at different temperatures (400°C to 1,000°C) in an abundant oxygen atmosphere. This study discusses the surface structure and optical characteristic of ZnO nanomaterials. The structure of the ZnO nanostructures is analyzed by X-ray diffraction, the superficial state by scanning electron microscopy, and the optical measurements which are carried out using the temperature-dependent photoluminescence (PL) spectra. In this study, we discuss the broad peak energy of the yellow-orange emission which shows tendency towards a blueshift with the temperature increase in the PL spectra. This differs from other common semiconductors which have an increase in their peak energy of deep-level emission along with measurement temperature.
近年来，氧化锌（ZnO）因其独特的性质和多样的应用，已成为最热门的研究材料之一。ZnO是一种本征半导体，具有宽带隙（3.37电子伏特）和大激子束缚能（60毫电子伏特），这使其适用于许多光学应用。在本实验中，采用简单的水热法在硅片上生长铟掺杂的ZnO纳米结构，然后在充足的氧气气氛中于不同温度（400°C至1000°C）下进行退火。本研究探讨了ZnO纳米材料的表面结构和光学特性。通过X射线衍射分析ZnO纳米结构的结构，通过扫描电子显微镜分析其表面状态，并使用温度相关的光致发光（PL）光谱进行光学测量。在本研究中，我们讨论了橙黄色发射的宽峰能量，该能量在PL光谱中呈现出随温度升高向蓝移的趋势。这与其他常见半导体不同，其他半导体的深能级发射峰能量会随着测量温度的升高而增加。
