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将哺乳动物细胞暴露于60赫兹的磁场或电场:对诱导产生的单链断裂的DNA修复分析。

Exposure of mammalian cells to 60-Hz magnetic or electric fields: analysis of DNA repair of induced, single-strand breaks.

作者信息

Frazier M E, Reese J A, Morris J E, Jostes R F, Miller D L

机构信息

Biology and Chemistry Department, Pacific Northwest Laboratory, Richland, Washington 99352.

出版信息

Bioelectromagnetics. 1990;11(3):229-34. doi: 10.1002/bem.2250110304.

Abstract

DNA damage was induced in isolated human peripheral lymphocytes by exposure at 5 Gy to 60Co radiation. Cells were permitted to repair the DNA damage while exposed to 60-Hz fields or while sham-exposed. Exposed cells were subjected to magnetic (B) or electric (E) fields, alone or in combination, throughout their allotted repair time. Repair was stopped at specific times, and the cells were immediately lysed and then analyzed for the presence of DNA single-strand breaks (SSB) by the alkaline-elution technique. Fifty to 75 percent of the induced SSB were repaired 20 min after exposure, and most of the remaining damage was repaired after 180 min. Cells were exposed to a 60-Hz ac B field of 1 mT; an E field of 1 or 20 V/m; or combined E and B fields of 0.2 V/m and 0.05 mT, 6 V/m and 0.6 mT, or 20 V/m and 1 mT. None of the exposures was observed to affect significantly the repair of DNA SSB.

摘要

通过将分离出的人外周血淋巴细胞暴露于5戈瑞的60钴辐射来诱导DNA损伤。细胞在暴露于60赫兹磁场或假暴露的同时被允许修复DNA损伤。在规定的修复时间内,将暴露的细胞单独或组合置于磁场(B)或电场(E)中。在特定时间停止修复,然后立即裂解细胞,接着通过碱性洗脱技术分析DNA单链断裂(SSB)的存在情况。暴露后20分钟,50%至75%的诱导性SSB得到修复,其余大部分损伤在180分钟后得到修复。细胞暴露于1毫特斯拉的60赫兹交流B场;1或20伏/米的E场;或0.2伏/米和0.05毫特斯拉、6伏/米和0.6毫特斯拉或20伏/米和1毫特斯拉的E场与B场组合。未观察到任何一种暴露对DNA SSB的修复有显著影响。

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