Division of Solid-State Electronics, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala, Sweden.
Adv Mater. 2012 Jul 17;24(27):3633-8. doi: 10.1002/adma.201200906. Epub 2012 Jun 15.
Small-hysteresis, high-performance thin-film transistors (TFTs) are readily realized simply by dip-coating of a solution-processable composite. The composite consists of single-walled carbon nanotubes (SWCNTs) embedded in semiconducting polymer used as the channel material. The resultant TFTs simultaneously exhibit large on/off current ratio, high on-current level, high mobility in the range 10-20 cm(2)V(-1)s(-1), and good uniformity and scalability.
通过简单的旋涂溶液处理复合薄膜，很容易制备得到具有小迟滞、高性能的薄膜晶体管（TFTs）。该复合薄膜由嵌入半导体聚合物中的单壁碳纳米管（SWCNTs）组成，作为沟道材料。所制备的 TFTs 同时具有大的开关电流比、高的导通电流水平、在 10-20 cm(2)V(-1)s(-1)范围内的高迁移率，以及良好的均匀性和可扩展性。
