Roberts Mark E, LeMieux Melburne C, Sokolov Anatoliy N, Bao Zhenan
Department of Chemical Engineering, Stanford University, Stauffer III, 381 North-South Mall, Stanford, California 94305-5025, USA.
Nano Lett. 2009 Jul;9(7):2526-31. doi: 10.1021/nl900287p.
Recent exploitations of the superior mechanical and electronic properties of carbon nanotubes (CNTs) have led to exciting opportunities in low-cost, high performance, carbon-based electronics. In this report, low-voltage thin-film transistors with aligned, semiconducting CNT networks are fabricated on a chemically modified polymer gate dielectric using both rigid and flexible substrates. The multifunctional polymer serves as a thin, flexible gate dielectric film, affords low operating voltages, and provides a platform for chemical functionalization. The introduction of amine functionality to the dielectric surface leads to the adsorption of a network enriched with semiconducting CNTs with tunable density from spin coating a bulk solution of unsorted CNTs. The composition of the deposited CNT networks is verified with Raman spectroscopy and electrical characterization. For transistors at operating biases below 1 V, we observe an effective device mobility as high as 13.4 cm(2)/Vs, a subthreshold swing as low as 130 mV/dec, and typical on-off ratios of greater than 1,000. This demonstration of high performance CNT thin-film transistors operating at voltages below 1 V and deposited using solution methods on polymeric and flexible substrates is an important step toward the realization of low-cost flexible electronics.
近期对碳纳米管（CNT）卓越机械和电子性能的开发，为低成本、高性能的碳基电子产品带来了令人兴奋的机遇。在本报告中，使用刚性和柔性基板，在化学改性的聚合物栅极电介质上制备了具有排列整齐的半导体碳纳米管网络的低压薄膜晶体管。这种多功能聚合物用作薄的柔性栅极电介质膜，可提供低工作电压，并为化学功能化提供了一个平台。在电介质表面引入胺官能团，可通过旋涂未分类碳纳米管的本体溶液，吸附密度可调的富含半导体碳纳米管的网络。通过拉曼光谱和电学表征验证了沉积的碳纳米管网络的组成。对于工作偏压低于1V的晶体管，我们观察到有效器件迁移率高达13.4 cm²/Vs，亚阈值摆幅低至130 mV/dec，典型的开/关比大于1000。这种在低于1V电压下工作且使用溶液法沉积在聚合物和柔性基板上的高性能碳纳米管薄膜晶体管的展示，是实现低成本柔性电子产品的重要一步。
