Sun Yi-Lin, Xie Dan, Xu Jian-Long, Zhang Cheng, Dai Rui-Xuan, Li Xian, Meng Xiang-Jian, Zhu Hong-Wei
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500Yu Tian Road, Shanghai 200083, China.
Sci Rep. 2016 Mar 16;6:23090. doi: 10.1038/srep23090.
Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect.
已使用单壁碳纳米管网络作为沟道层，并旋涂有机铁电体聚偏氟乙烯-三氟乙烯（P(VDF-TrFE)）薄膜作为顶栅绝缘体来制造双栅场效应晶体管。采用标准光刻工艺实现有机P(VDF-TrFE)薄膜和顶栅电极的图案化，这与传统的互补金属氧化物半导体（CMOS）工艺技术兼容。据报道，一种在极化条件下调制P(VDF-TrFE)顶栅晶体管沟道中阈值电压的有效方法。功能性P(VDF-TrFE)栅极电介质的引入也为我们提供了一种抑制单壁碳纳米管网络初始滞后并获得可控铁电磁滞行为的替代方法。已发现施加底栅电压是通过静电掺杂效应高度控制基于网络化单壁碳纳米管的场效应晶体管阈值电压的另一种有效方法。
