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光学泵浦诱导 MoS2 单层中的谷极化。

Valley polarization in MoS2 monolayers by optical pumping.

机构信息

Physics Department, The University of Hong Kong, Pokfulam road, Hong Kong, China.

出版信息

Nat Nanotechnol. 2012 Aug;7(8):490-3. doi: 10.1038/nnano.2012.95. Epub 2012 Jun 17.

Abstract

Most electronic devices exploit the electric charge of electrons, but it is also possible to build devices that rely on other properties of electrons. Spintronic devices, for example, make use of the spin of electrons. Valleytronics is a more recent development that relies on the fact that the conduction bands of some materials have two or more minima at equal energies but at different positions in momentum space. To make a valleytronic device it is necessary to control the number of electrons in these valleys, thereby producing a valley polarization. Single-layer MoS(2) is a promising material for valleytronics because both the conduction and valence band edges have two energy-degenerate valleys at the corners of the first Brillouin zone. Here, we demonstrate that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2). Our results, and similar results by Mak et al., demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS(2) monolayers.

摘要

大多数电子设备利用电子的电荷,但也有可能制造出依赖电子其他特性的设备。例如,自旋电子设备利用电子的自旋。谷电子学是一种更近期的发展,它依赖于某些材料的导带在动量空间中处于相同能量但在不同位置具有两个或更多最小值的事实。要制造谷电子设备,需要控制这些谷中的电子数量,从而产生谷极化。单层 MoS(2)是谷电子学的一种有前途的材料,因为导带和价带边缘在第一布里渊区的角处都有两个能量简并的谷。在这里,我们证明了用圆偏振光进行光学泵浦可以在原始单层 MoS(2)中实现 30%的谷极化。我们的结果和 Mak 等人的类似结果表明,在 MoS(2)单层中进行光学谷控制和基于谷的电子和光电子应用是可行的。

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