Yu Hui, Pantouvaki Marianna, Van Campenhout Joris, Korn Dietmar, Komorowska Katarzyna, Dumon Pieter, Li Yanlu, Verheyen Peter, Absil Philippe, Alloatti Luca, Hillerkuss David, Leuthold Juerg, Baets Roel, Bogaerts Wim
Photonics Research Group, Department of Information Technology, Ghent University-imec, Center for Nano- and Biophotonics (NB Photonics), St.-Pietersnieuwstraat 41,9000 Gent, Belgium.
Opt Express. 2012 Jun 4;20(12):12926-38. doi: 10.1364/OE.20.012926.
Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.
在同一制造平台上，对具有横向和叉指式PN结的基于载流子耗尽的硅调制器进行了系统比较。结果表明，叉指式二极管在实现0.62 V∙cm的低VπLπ方面优于横向二极管，在具有可比传播损耗的情况下，代价是更高的耗尽电容。利用叉指式PN结的低VπLπ，在一个500 µm长、静态插入损耗为2.8 dB的器件上实现了具有7.5 dB消光比的10 Gbit/s调制。此外，对于一个由横向二极管和共同设计的行波电极组成的3 mm长的器件，展示了高达40 Gbit/s的调制。
