Thomson D J, Gardes F Y, Reed G T, Milesi F, Fedeli J-M
Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK.
Opt Express. 2010 Aug 30;18(18):19064-9. doi: 10.1364/OE.18.019064.
With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6 dB modulation depth at 10 Gbit/s from a 3.5 m long device.
随着硅光子器件即将商业化，对能够实现高成品率和器件性能可重复性的制造工艺提出了要求。器件不同元件的精确对准可能是将性能变化降至最低甚至避免器件故障的主要制造挑战。本文介绍了一种高速载流子耗尽型硅光调制器的新设计，其特点是采用自对准制造工艺来形成pn结。文中给出了首次制造运行的实验结果，该结果表明，一个3.5米长的器件在10 Gbit/s时调制深度达到6 dB。
