基于交错结且在300毫米绝缘体上硅（SOI）晶圆上制造的低损耗40吉比特/秒硅调制器。

Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers.

作者信息

Marris-Morini D, Baudot C, Fédéli J-M, Rasigade G, Vulliet N, Souhaité A, Ziebell M, Rivallin P, Olivier S, Crozat P, Le Roux X, Bouville D, Menezo S, Bœuf F, Vivien L

出版信息

Opt Express. 2013 Sep 23;21(19):22471-5. doi: 10.1364/OE.21.022471.

DOI:10.1364/OE.21.022471

PMID:24104136

Abstract

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.

摘要

我们展示了基于载流子耗尽的高速硅调制器，该调制器采用CMOS代工设施在300毫米SOI晶圆上制造的交错pn结中实现。设计、制造并表征了长度为950 µm的马赫曾德尔（MZ）和半径为100 µm的环形谐振器（RR）调制器。两种器件均实现了40 Gbit/s的数据传输。MZ调制器在工作点处具有7.9 dB的高消光比，片上损耗仅为4 dB。