Marris-Morini D, Virot L, Baudot C, Fédéli J-M, Rasigade G, Perez-Galacho D, Hartmann J-M, Olivier S, Brindel P, Crozat P, Bœuf F, Vivien L
Opt Express. 2014 Mar 24;22(6):6674-9. doi: 10.1364/OE.22.006674.
We demonstrated 40 Gbit/s optical link by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips. The optical modulator was based on carrier depletion in a pn diode integrated in a 950-µm long Mach-Zehnder interferometer. The Ge photo-detector was a lateral pin diode butt coupled to a silicon waveguide. The overall loss, which is mainly due to coupling (3 grating couplers times ~4 dB) was estimated to be lower than 18 dB. That also included modulator loss (4.9-dB) and propagation loss (<1 dB/cm). Both optoelectronic devices have been fabricated on a 300-mm CMOS platform to address high volume production markets.
我们通过将硅（Si）光调制器与来自两个独立光子芯片的锗（Ge）光电探测器耦合，展示了40 Gbit/s的光链路。该光调制器基于集成在950微米长马赫-曾德尔干涉仪中的pn二极管中的载流子耗尽。锗光电探测器是一个横向pin二极管，与硅波导对接耦合。总损耗主要归因于耦合（3个光栅耦合器，约4 dB），估计低于18 dB。这还包括调制器损耗（4.9 dB）和传播损耗（<1 dB/cm）。这两种光电器件均在300毫米CMOS平台上制造，以满足高产量生产市场的需求。
