Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Ultramicroscopy. 2012 Dec;123:74-9. doi: 10.1016/j.ultramic.2012.05.008. Epub 2012 Jun 2.
In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si(3)N(4)/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si(3)N(4)/SiO(2) interface and in bulk Si(3)N(4) using aberration-corrected scanning transmission electron microscopy.
在氮化硅结构陶瓷中，陶瓷晶粒与各种烧结添加剂形成的非晶态晶界相之间的界面处的原子和电子结构控制着整体的力学和热学性能。在过去的十年中，已经解析了重元素（稀土元素）在 Si(3)N(4)/IGF 界面处的原子排列。然而，轻元素的原子位置对于获得界面的完整描述是必不可少的，但这一点一直缺乏。本文综述了作者使用相衬校正扫描透射电子显微镜来确定 Si(3)N(4)/SiO(2)界面和 bulk Si(3)N(4)中氮和氧等轻元素的原子排列的努力。
