Hu Yingtao, Xiao Xi, Xu Hao, Li Xianyao, Xiong Kang, Li Zhiyong, Chu Tao, Yu Yude, Yu Jinzhong
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China.
Opt Express. 2012 Jul 2;20(14):15079-85. doi: 10.1364/OE.20.015079.
A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device.
