Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA.
Nanotechnology. 2012 Aug 3;23(30):305305. doi: 10.1088/0957-4484/23/30/305305. Epub 2012 Jul 11.
We report a non-lithographical method for the fabrication of ultra-thin silicon (Si) nanowire (NW) and nano-sheet arrays through metal-assisted-chemical-etching (MacEtch) with gold (Au). The mask used for metal patterning is a vertical InAs NW array grown on a Si substrate via catalyst-free, strain-induced, one-dimensional heteroepitaxy. Depending on the Au evaporation angle, the shape and size of the InAs NWs are transferred to Si by Au-MacEtch as is (NWs) or in its projection (nano-sheets). The Si NWs formed have diameters in the range of ∼25-95 nm, and aspect ratios as high as 250 in only 5 min etch time. The formation process is entirely free of organic chemicals, ensuring pristine Au-Si interfaces, which is one of the most critical requirements for high yield and reproducible MacEtch.
我们报告了一种非光刻法，通过金属辅助化学刻蚀（MacEtch）用金（Au）制造超薄膜硅（Si）纳米线（NW）和纳米片阵列。用于金属图案化的掩模是通过无催化剂、应变诱导的一维异质外延在 Si 衬底上生长的垂直 InAs NW 阵列。根据 Au 蒸发角度的不同，通过 Au-MacEtch 将 InAs NW 的形状和尺寸以原样（NWs）或其投影（纳米片）转移到 Si 上。形成的 Si NW 的直径在 ∼25-95nm 范围内，在仅 5 分钟的蚀刻时间内，高可达 250 的纵横比。该形成过程完全不使用有机化学品，确保了原始的 Au-Si 界面，这是高产量和可重复的 MacEtch 的最关键要求之一。
