当外延生长遇到等离子体：通向有序纳米片阵列的途径。

When epitaxy meets plasma: a path to ordered nanosheets arrays.

机构信息

Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Strasse 9-11, Siegen, Germany.

出版信息

Sci Rep. 2013;3:2427. doi: 10.1038/srep02427.

DOI:10.1038/srep02427

PMID:23939624

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3741627/

Abstract

The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional "top-down" methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a "planar defects induced selective growth" effect is proposed to elucidate the corresponding growth mechanism.

摘要

将二维（2D）纳米片（NS）组装成有序阵列，甚至更复杂的结构，这在制造各种基于 NS 的器件方面提供了巨大的机会。关于这种有序 NS 的报道很少，所有传统的“自上而下”方法通常导致仅具有有限表面质量的粗糙结构。在这项工作中，我们展示了一种在等离子体激活化学气相沉积技术中直接合成有序 NS 阵列的途径，该技术利用在具有密排晶格的晶体的异质外延生长过程中形成的平面缺陷。例如，展示了在（001）和（111）Si 衬底上具有明确定向的 3C-SiC NS 阵列的合成。详细分析确定了平面缺陷和等离子体环境是决定所得 2D NS 阵列的关键因素。因此，提出了“平面缺陷诱导的选择性生长”效应来阐明相应的生长机制。