College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China.
Nanoscale Res Lett. 2012 Dec 5;7(1):663. doi: 10.1186/1556-276X-7-663.
In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the etching solution, SiNWs with different morphologies and surface characteristics are obtained. A reasonable mechanism of the etching process was proposed. Photocatalytic experiment shows that SiNWs prepared by 20% H2O2 etching solution exhibit the best activity in the decomposition of the target organic pollutant, Rhodamine B (RhB), under Xe arc lamp irradiation for its appropriate Si nanowire density with the effect of Si content and contact area of photocatalyst and RhB optimized.
在本研究中，通过在 HF 和 H2O2 组成的蚀刻溶液中对硅片进行金属辅助化学蚀刻的方法制备了单晶硅纳米线阵列（SiNWs）。通过在硅片上形成纳米结构，单晶 SiNWs 的光电性能得到了极大的提高。通过控制蚀刻溶液中的过氧化氢浓度，可以获得具有不同形貌和表面特性的 SiNWs。提出了一个合理的蚀刻过程机制。光催化实验表明，在 Xe 弧灯照射下，用 20%H2O2 蚀刻溶液制备的 SiNWs 在分解目标有机污染物罗丹明 B（RhB）方面表现出最好的活性，因为其具有适当的 Si 纳米线密度，优化了 Si 含量和光催化剂与 RhB 的接触面积的影响。
