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半导体纳米晶的纳米图案化导电膜。

Nanopatterned electrically conductive films of semiconductor nanocrystals.

机构信息

Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

出版信息

Nano Lett. 2012 Aug 8;12(8):4404-8. doi: 10.1021/nl3022863. Epub 2012 Jul 17.

Abstract

We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as cracking and clustering that typically exist in larger-scale films. We find that the electrical conductivity of the nanoscale films is 180 times higher than that of drop-cast, microscopic films made of the same type of nanocrystal. Our technique for forming the nanoscale films is based on electron-beam lithography and a lift-off process. The patterns have dimensions as small as 30 nm and are positioned on a surface with 30 nm precision. The method is flexible in the choice of nanocrystal core-shell materials and ligands. We demonstrate patterns with PbS, PbSe, and CdSe cores and Zn(0.5)Cd(0.5)Se-Zn(0.5)Cd(0.5)S core-shell nanocrystals with a variety of ligands. We achieve unprecedented versatility in integrating semiconductor nanocrystal films into device structures both for studying the intrinsic electrical properties of the nanocrystals and for nanoscale optoelectronic applications.

摘要

我们展示了首例纳米尺寸的半导体纳米晶薄膜,其具有导电性且无裂纹。这些薄膜使得研究纳米晶的固有电特性成为可能,而不会受到通常存在于较大尺度薄膜中的缺陷(如裂纹和团聚)的影响。我们发现,纳米尺度薄膜的电导率比由相同类型纳米晶制成的微尺度旋涂薄膜高 180 倍。我们形成纳米尺度薄膜的技术基于电子束光刻和剥离工艺。这些图案的尺寸小至 30nm,并且可以以 30nm 的精度定位在表面上。该方法在选择纳米晶核壳材料和配体方面具有灵活性。我们展示了具有 PbS、PbSe 和 CdSe 核以及 Zn(0.5)Cd(0.5)Se-Zn(0.5)Cd(0.5)S 核壳纳米晶的各种配体的图案。我们实现了将半导体纳米晶薄膜集成到器件结构中的前所未有的多功能性,既可以研究纳米晶的固有电特性,也可以用于纳米尺度光电应用。

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