NanoElectronics Group, MESAC Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
Nanotechnology. 2012 Aug 10;23(31):315303. doi: 10.1088/0957-4484/23/31/315303.
Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO₂/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.
采用步进式和闪光纳米压印光刻技术，并结合氢倍半硅氧烷（HSQ）平坦化工艺，在 ZnO/SiO₂/Si 衬底上制作了超高频表面声波器件。对于指状电极宽度从 125nm 降至 65nm 的叉指换能器，实现了出色的临界尺寸控制。激发并检测到了基频和高阶瑞利模式，频率高达 16.1GHz，这是迄今为止在硅衬底上报道的基于 ZnO 的换能器的最高频率。通过数值模拟证实了表面声波模式。模拟结果与实验数据吻合较好。
