Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan.
Nanoscale Res Lett. 2012 Aug 1;7(1):431. doi: 10.1186/1556-276X-7-431.
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.
已展示一种基于 III-V 金属-氧化物半导体场效应晶体管 (MOSFET) 制造的三维 (3D) 鳍式场效应晶体管结构，该结构使用亚微米 GaAs 鳍作为高迁移率沟道。鳍形通道的厚度与宽度比 (TFin/WFin) 等于 1。纳米堆叠高 k Al2O3 电介质被采用作为栅极绝缘体，以形成金属-氧化物-半导体结构，从而抑制栅极泄漏。3D III-V MOSFET 表现出出色的栅极可控性，并表现出高 Ion/Ioff 比 (>105) 和低亚阈值摆幅 80 mV/decade。与传统的肖特基栅金属半导体场效应晶体管或平面 III-V MOSFET 相比，这项工作中的 III-V MOSFET 表现出显著的性能提升，有望为基于 III-V 材料的高性能 n 沟道器件的未来发展提供帮助。
