Hayashi Yasuhiko, Tokunaga Tomoharu, Iijima Toru, Iwata Takuya, Kalita Golap, Tanemura Masaki, Sasaki Katsuhiro, Kuroda Kotaro
Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555, Japan.
Nanoscale Res Lett. 2012 Aug 8;7(1):448. doi: 10.1186/1556-276X-7-448.
Multi-segmented one-dimensional metal nanowires were encapsulated within carbon nanotubes (CNTs) through in-situ filling technique during plasma-enhanced chemical vapor deposition process. Transmission electron microscopy (TEM) and environmental TEM were employed to characterize the as-prepared sample at room temperature and high temperature. The selected area electron diffractions revealed that the Pd4Si nanowire and face-centered-cubic Co nanowire on top of the Pd nanowire were encapsulated within the bottom and tip parts of the multiwall CNT, respectively. Although the strain-induced deformation of graphite walls was observed, the solid-state phases of Pd4Si and Co-Pd remain even at above their expected melting temperatures and up to 1,550 ± 50°C. Finally, the encapsulated metals were melted and flowed out from the tip of the CNT after 2 h at the same temperature due to the increase of internal pressure of the CNT.
在等离子体增强化学气相沉积过程中,通过原位填充技术将多段一维金属纳米线封装在碳纳米管(CNT)内。利用透射电子显微镜(TEM)和环境TEM在室温及高温下对所制备的样品进行表征。选区电子衍射表明,Pd4Si纳米线和位于Pd纳米线上的面心立方Co纳米线分别被封装在多壁CNT的底部和顶部。尽管观察到石墨壁的应变诱导变形,但即使在高于其预期熔点直至1550±50°C的温度下,Pd4Si和Co-Pd的固态相仍保持不变。最后,由于CNT内部压力的增加,在相同温度下2小时后,封装的金属从CNT的尖端熔化并流出。