Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan.
Nano Lett. 2012 Sep 12;12(9):4770-4. doi: 10.1021/nl302202r. Epub 2012 Aug 20.
We present a bidirectional growth mode of InP nanowires grown by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We studied the effect of the supply ratio of DEZn ([DEZn]) on InP grown structure morphology and crystal structures during the SA-MOVPE. Two growth regimes were observed in the investigated range of the [DEZn] on an InP(111)B substrate. At low [DEZn], grown structures formed tripod structures featuring three nanowires branched toward the [111]A directions. At high [DEZn], we obtained hexagonal pillar-type structures vertically grown on the (111)B substrate. These results show that the growth direction changes from [111]A to [111]B as [DEZn] is increased. We propose a growth mechanism based on the correlation between the incident facet of rotational twins and the shapes of the grown structures. Our results bring us one step closer to controlling the direction of nanowires on a Si substrate that has a nonpolar nature. They can also be applied to the development of InP nanowire devices.
我们提出了一种由选择性区域金属有机气相外延（SA-MOVPE）生长的 InP 纳米线的双向生长模式。我们研究了在 SA-MOVPE 过程中，DEZn（[DEZn]）的供应比对 InP 生长结构形貌和晶体结构的影响。在 InP(111)B 衬底上的[DEZn]的研究范围内观察到两种生长模式。在低[DEZn]时，生长结构形成了具有三个分支到[111]A 方向的纳米线的三脚架结构。在高[DEZn]时，我们获得了垂直生长在（111）B 衬底上的六方柱型结构。这些结果表明，随着[DEZn]的增加，生长方向从[111]A 变为[111]B。我们提出了一种基于旋转孪晶入射面与生长结构形状之间相关性的生长机制。我们的结果使我们离控制具有非极性的 Si 衬底上纳米线的方向更近了一步。它们还可以应用于 InP 纳米线器件的开发。
