National Research Council Canada, Ottawa, Canada.
Nanotechnology. 2012 Sep 28;23(38):385205. doi: 10.1088/0957-4484/23/38/385205. Epub 2012 Sep 5.
The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires are then grown which exhibit narrow 4.2 K photoluminescence linewidths of 3.7 meV at 1.490 meV, and no evidence of emission related to stacking faults or zincblende insertions.
研究了 InP 纳米线中晶体相纯度和径向生长之间的相互作用。通过改变生长速率和 V/III 比，可以可控地在纤锌矿纳米线中引入高或低位错密度区域。研究发现，位错密度高的区域会促进径向生长。通过仔细选择生长条件，可以生长出纯纤锌矿 InP 纳米线，其在 1.490 meV 处的 4.2 K 光致发光线宽为 3.7 meV，没有与位错或闪锌矿插入相关的发射证据。
