Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sappoo, Japan.
Nano Lett. 2010 May 12;10(5):1699-703. doi: 10.1021/nl1000407.
We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask. It was found that uniform array of InP nanowires with hexagonal cross section and with negligible tapering were grown under two distinctive growth conditions. The nanowires grown in two different growth conditions were found to exhibit different crystal structures. It was also found that the orientation and size of hexagon were different, suggesting that the difference of the growth behavior. A model for the transition of crystal structure is presented based on the atomic arrangements and termination of InP surfaces. Photoluminescence measurement revealed that the transition took place for nanowires with diameters up to 1 microm.
我们使用选择性区域金属有机气相外延（SA-MOVPE）研究了无催化剂生长的磷化铟纳米线，并表明它们的晶体结构会随生长条件而发生转变。我们在磷化铟衬底上生长了纳米线，衬底上的掩膜定义了生长模板的图案。纳米线仅在掩膜的开口区域生长。结果发现，在两种截然不同的生长条件下，生长出了具有六边形横截面且几乎没有锥形的均匀纳米线阵列。结果还发现，在两种不同生长条件下生长的纳米线表现出不同的晶体结构。这也表明了生长行为的差异。基于磷化铟表面的原子排列和终止方式，我们提出了一种晶体结构转变的模型。光致发光测量表明，这种转变发生在直径达 1 微米的纳米线上。
