Department of Applied Chemistry, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan.
Nanotechnology. 2012 Jun 1;23(21):215304. doi: 10.1088/0957-4484/23/21/215304. Epub 2012 May 3.
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the diameter of silica spheres used as a lens and the exposure time. Through this resist mask with a two-dimensional (2D) hexagonal array of openings, the pore growth of InP during anodic etching was investigated. The isolated openings could act as initiation sites for the radial growth of pores, resulting in the formation of hexagonal geometric patterns based on Voronoi tessellation in 2D space. With further anodic etching, inside the substrate, the growth direction of the pores changed from radial to perpendicular relative to the substrate. Moreover, by removing domains consisting of nanopores by anisotropic chemical etching, the fabrication of InP microhole arrays with circular and triangular cross sections was also achieved.
为了制备由 InP 纳米多孔结构组成的有序几何图案，采用球光刻法制备了具有周期性开口阵列的光致抗蚀剂掩模。光致抗蚀剂掩模的开口直径和间隔可以通过调整用作透镜的二氧化硅球的直径和曝光时间来独立控制。通过具有二维（2D）六边形开口阵列的这种抗蚀剂掩模，研究了在阳极刻蚀过程中 InP 的孔生长。孤立的开口可以作为孔的径向生长的起始位点，从而在二维空间中基于 Voronoi 细分形成六边形几何图案。随着进一步的阳极刻蚀，在基底内部，孔的生长方向从相对于基底的径向变为垂直。此外，通过各向异性化学蚀刻去除由纳米孔组成的域，还实现了具有圆形和三角形横截面的 InP 微孔阵列的制造。
