School of Information and Communication Technology, Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 Kista, Sweden.
Nano Lett. 2011 Nov 9;11(11):4805-11. doi: 10.1021/nl202628m. Epub 2011 Sep 30.
Dense and uniform arrays of InP-based nanopillars were fabricated by dry etching using self-assembly of colloidal silica particles for masking. The pillars, both single and arrays, fabricated from epitaxially grown InP and InP/GaInAsP/InP quantum well structures show excellent photoluminescence (PL) even at room temperature. The measured PL line widths are comparable to the as-grown wafer indicating high quality fabricated pillars. A stamping technique enables transfer with arbitrary densities of the nanopillars freed from the substrate by selectively etching a sacrificial InGaAs layer.
采用胶体硅颗粒自组装进行掩模的干法刻蚀，制备了致密均匀的 InP 基纳米柱阵列。即使在室温下，由外延生长的 InP 和 InP/GaInAsP/InP 量子阱结构制备的单根纳米柱和纳米柱阵列也表现出优异的光致发光（PL）性能。测量得到的 PL 线宽与原始晶圆相当，表明所制备的纳米柱质量很高。通过选择性刻蚀牺牲的 InGaAs 层，可以将纳米柱从衬底上释放出来，采用压印技术可以实现任意密度的纳米柱转移。
