Physics Department, College of Science, Sultan Qaboos University, P,O, Box 36, Al Khoud, Sultan Qaboos, Muscat, 123, Oman.
Nanoscale Res Lett. 2012 Aug 19;7(1):466. doi: 10.1186/1556-276X-7-466.
Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously.
采用 X 射线光电子能谱(XPS)和原子力显微镜技术研究了不同能量 Ar+离子辐照少层石墨烯(FLG)引起的粗糙度和缺陷。研究结果提供了波纹形成、sp2 到 sp3 杂化碳转变、电子损伤、Ar+注入、FLG 中异常缺陷和边缘重构的直接实验证据,这些证据取决于辐照能量。此外,还观察到类似于薄膜斜角生长中发现的遮蔽效应。通过 XPS C(1s)峰的分峰处理,从 sp2 键合到 sp3 杂化状态的转变可以实现可靠的量化。尽管通过 C KVV 光谱的俄歇跃迁导数的形状证明了离子辐照的影响,但我们表明,通常在文献中使用的这些光谱的 D 参数值无法解释 sp2 到 sp3 杂化转变。与已知情况相反,揭示了使用大 FLG 样品倾斜角度的离子辐照可能会导致边缘重构。此外,如前所述,使用 0.25keV 的低能量辐照 FLG 可能是一种剥离石墨烯层的可行方法,而无需焦耳加热。