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薄硅膜上单分散弱相互作用银纳米立方体单层的等离子体性质的精细调节。

Fine tuning of plasmonic properties of monolayers of weakly interacting silver nanocubes on thin silicon films.

机构信息

Department of Chemistry, Carleton University, 1125 Colonel By Dr. Ottawa, ON, Canada.

出版信息

Nanoscale. 2012 Oct 21;4(20):6374-82. doi: 10.1039/c2nr31885g.

DOI:10.1039/c2nr31885g
PMID:22948712
Abstract

Plasmonic properties, such as refractive index sensitivity (RIS), surface enhancement of the Raman signal (SERS), fluorescence quenching, and photocatalytic activity, of monolayers of weakly interacting monodisperse silver nanocubes were qualitatively modified in a very well controlled manner by supporting them on thin silicon films with varying thickness. Such fine tunability is made possible by the strong dependence of the nanocube dipolar (D) and quadrupolar (Q) plasmon mode hybridization on the refractive index of the supporting substrate. By increasing the Si film thickness from zero to ~25 nm we were able to "shift" the D resonance mode by up to 200 nm for ~80 nm cubes without significantly affecting the Q mode. The silicon supported nanocubes showed a significant improvement in RIS via the Q mode with a figure of merit greater than 6.5 and about an order of magnitude enhancement of the SERS signal due to the stronger electric field created by the D mode. Such substrates also showed a ~10 times decrease in rhodamine 6G fluorescence as well as the rates of amorphous carbon formation. The study proposes a new way to design and engineer plasmonic nanostructures.

摘要

银纳米立方体单层的等离子体特性,如折射率灵敏度(RIS)、表面增强拉曼信号(SERS)、荧光猝灭和光催化活性,通过在具有不同厚度的薄硅膜上支撑它们,可以以非常可控的方式定性地进行修饰。这种微调是通过纳米立方体偶极(D)和四极(Q)等离子体模式杂化对支撑基底折射率的强烈依赖性来实现的。通过将 Si 膜厚度从 0 增加到约 25nm,我们能够将 D 共振模式“移动”多达 200nm,而对于约 80nm 的立方体,Q 模式的影响不大。与 D 模式相比,硅支撑纳米立方体在 RIS 方面表现出显著的改善,品质因数大于 6.5,并且由于 D 模式产生的更强电场,SERS 信号增强了约一个数量级。由于这种更强的电场,此类衬底还表现出罗丹明 6G 荧光降低约 10 倍以及非晶碳形成速率降低。该研究提出了一种设计和工程等离子体纳米结构的新方法。

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