Shin Hong-Sik, Yun Ho-Jin, Baek Kyu-Ha, Ham Yong-Hyun, Park Kun-Sik, Kim Dong-Pyo, Lee Ga-Won, Lee Hi-Deok, Lee Kijun, Do Lee-Mi
Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon, 305-764, Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):5325-9. doi: 10.1166/jnn.2012.6253.
We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.
我们采用微接触印刷（micro-CP）制备了具有1微米沟道的倒置共面并五苯薄膜晶体管（TFT）。使用聚二甲基硅氧烷（PDMS）弹性印章成功实现了无需蚀刻工艺的微尺度源极/漏极电极图案化。我们使用银纳米颗粒墨水作为电极材料，并通过在热板上进行两步热退火有效降低了银电极的薄层电阻和表面粗糙度，这改善了并五苯TFT的迁移率、开/关比和亚阈值斜率（SS）。此外，在氮气气氛中于热板上对器件进行30秒的退火可以增强有机薄膜晶体管（OTFT）的关电流和迁移率特性，而不会损坏并五苯薄膜，并增加并五苯与介电层（SiO2）之间的附着力，这通过器件退火后XRD光谱中并五苯薄膜的相变进行了研究。
