Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Nanoscale. 2012 Oct 21;4(20):6637-41. doi: 10.1039/c2nr31833d.
Atomically thin molybdenum disulfide (MoS(2)) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS(2) atomic thin layers is still lacking. Here we report that wafer-scale MoS(2) thin layers can be obtained using MoO(3) thin films as a starting material followed by a two-step thermal process, reduction of MoO(3) at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS(2) films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.
原子级薄的二硫化钼（MoS(2)）因其直接带隙特性以及在光电子学和能量收集方面的潜在应用而受到极大关注。同时，它具有极好的柔韧性，有望应用于柔性电子学。然而，获得大面积 MoS(2)原子层的合成方法仍然缺乏。在这里，我们报告了一种使用 MoO(3)薄膜作为起始材料，然后经过两步热过程来获得晶圆级 MoS(2)薄层的方法：在氢气中于 500°C 还原 MoO(3)，然后在 1000°C 下有硫存在的情况下进行硫化。光谱、光学和电学特性表明，这些薄膜是多晶的，具有半导体性质。所获得的 MoS(2)薄膜厚度均匀，易于转移到任意衬底上，这使得这些薄膜适合用于柔性电子学或光电子学。
