Aldosari Norah, Poston William, Jensen Gregory, Bizhani Maryam, Tariq Muhammad, Stinaff Eric
Department of Physics and Astronomy Athens, Ohio University, Athens, OH 45701, USA.
Nanoscale and Quantum Phenomena Institute (NQPI), Athens, OH 45701, USA.
Nanomaterials (Basel). 2025 Jan 16;15(2):131. doi: 10.3390/nano15020131.
High-quality two-dimensional transition metal dichalcogenides (2D TMDs), such as molybdenum disulfide (MoS), have significant potential for advanced electrical and optoelectronic applications. This study introduces a novel approach to control the localized growth of MoS through the selective oxidation of bulk molybdenum patterns using Joule heating, followed by sulfurization. By passing an electric current through molybdenum patterns under ambient conditions, localized heating induced the formation of a molybdenum oxide layer, primarily MoO and MoO, depending on the applied power and heating duration. These oxides act as nucleation sites for the subsequent growth of MoS. The properties of the grown MoS films were investigated using Raman spectroscopy and photoluminescence measurements, showing promising film quality. This study demonstrates that Joule heating can be an effective method for precise control over TMD growth, offering a scalable approach for producing high-quality 2D materials that have the potential to be integrated into next-generation electrical and optoelectronic technologies.
高质量的二维过渡金属二硫属化物（2D TMDs），如二硫化钼（MoS），在先进的电气和光电应用中具有巨大潜力。本研究介绍了一种新颖的方法，通过焦耳加热对块状钼图案进行选择性氧化，随后进行硫化，来控制MoS的局部生长。在环境条件下，通过钼图案施加电流，局部加热会诱导形成一层氧化钼层，主要是MoO和MoO，这取决于施加的功率和加热持续时间。这些氧化物作为随后MoS生长的成核位点。使用拉曼光谱和光致发光测量对生长的MoS薄膜的性质进行了研究，结果显示薄膜质量良好。本研究表明，焦耳加热可以成为精确控制TMD生长的有效方法，为生产高质量二维材料提供了一种可扩展的方法，这些材料有可能集成到下一代电气和光电技术中。
