Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain.
Phys Rev Lett. 2012 May 18;108(20):206808. doi: 10.1103/PhysRevLett.108.206808. Epub 2012 May 17.
The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times, acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.
讨论了在石墨烯和其他材料中自旋弛豫的差异。对于通过散射过程的弛豫,Elliott-Yafet 机制,自旋和动量散射时间之间的关系,获得了对载流子密度的依赖性,该依赖性与散射机制和迁移率与载流子浓度的关系无关。这种依赖性对石墨烯中自旋弛豫的起源施加了严格的限制。自旋弛豫的密度依赖性使我们能够区分普通杂质和局部改变自旋轨道相互作用的缺陷。