Kamalakar M Venkata, Groenveld Christiaan, Dankert André, Dash Saroj P
Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Kemivagen 9, SE-41296 Göteborg, Sweden.
Nat Commun. 2015 Apr 10;6:6766. doi: 10.1038/ncomms7766.
Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ∼6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.
石墨烯是未来自旋电子技术中长距离自旋通信的理想介质。到目前为止，这一前景受到剥落石墨烯薄片尺寸较小以及大面积化学气相沉积（CVD）石墨烯较低的自旋输运特性的限制。在此，我们展示了室温下SiO₂/Si衬底上CVD石墨烯的高自旋电子性能。我们表明，在室温下，自旋能够在长达16μm的长沟道长度上实现纯自旋输运和进动，自旋寿命为1.2ns，自旋扩散长度约为6μm。这些自旋参数比之前的报道高出多达六倍，并且在工业标准SiO₂/Si衬底上的任何形式的原始石墨烯中，它们在室温下都是最高的。我们的详细研究强化了在晶圆尺度上CVD石墨烯所观察到的性能，并为基于横向自旋的存储器和逻辑应用的开发开辟了新前景。
