Molle Alessandro, Yuhara Junji, Yamada-Takamura Yukiko, Sofer Zdenek
CNR-IMM, Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy.
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan.
Chem Soc Rev. 2025 Feb 17;54(4):1845-1869. doi: 10.1039/d4cs00999a.
Since the debut of silicene in the experimental stage more than a decade ago, the family of two-dimensional elementary layers beyond graphene, called Xenes or transgraphenes, has rapidly expanded to include elements from groups II to VI of the periodic table. This expansion has opened pathways for the engineering of elementary monolayers that are inherently different from their bulk counterparts in terms of fundamental physical properties. Common guidelines for synthesizing Xenes can be categorized into well-defined methodological approaches. On the one hand, bottom-up methods, such as physical epitaxial methods, enable the growth of monolayers, multilayers, and heterostructured Xenes. On the other hand, top-down chemical methods, including topotactic deintercalation and liquid-phase exfoliation, are gaining prominence due to the possibility of massive production. This review provides an extensive view of the currently available synthesis routes for Xenes, highlighting the full range of Xenes reported to date, along with the most relevant identification techniques.
自十多年前硅烯在实验阶段首次亮相以来，石墨烯之外的二维元素层家族，即被称为Xenes或准石墨烯的材料，已迅速扩展，涵盖了元素周期表中第二至第六族的元素。这种扩展为基础单层材料的工程设计开辟了道路，这些单层材料在基本物理性质方面与它们的块状对应物有着本质区别。合成Xenes的通用指南可分为明确的方法学途径。一方面，自下而上的方法，如物理外延法，能够生长单层、多层和异质结构的Xenes。另一方面，自上而下的化学方法，包括拓扑脱嵌和液相剥离，由于具有大规模生产的可能性而日益受到关注。本综述广泛介绍了目前可用的Xenes合成路线，重点介绍了迄今为止报道的所有Xenes，以及最相关的识别技术。
