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用于硅纳米线太阳能电池应用的非晶硅/硅纳米线壳/核。

a-Si:H/SiNW shell/core for SiNW solar cell applications.

机构信息

Department of Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia.

出版信息

Nanoscale Res Lett. 2013 Nov 6;8(1):466. doi: 10.1186/1556-276X-8-466.

Abstract

Vertically aligned silicon nanowires have been synthesized by the chemical etching of silicon wafers. The influence of a hydrogenated amorphous silicon (a-Si:H) layer (shell) on top of a silicon nanowire (SiNW) solar cell has been investigated. The optical properties of a-Si:H/SiNWs and SiNWs are examined in terms of optical reflection and absorption properties. In the presence of the a-Si:H shell, 5.2% reflection ratio in the spectral range (250 to 1,000 nm) is achieved with a superior absorption property with an average over 87% of the incident light. In addition, the characteristics of the solar cell have been significantly improved, which exhibits higher open-circuit voltage, short-circuit current, and efficiency by more than 15%, 12%, and 37%, respectively, compared with planar SiNW solar cells. Based on the current-voltage measurements and morphology results, we show that the a-Si:H shell can passivate the defects generated by wet etching processes.

摘要

通过硅片的化学腐蚀合成了垂直排列的硅纳米线。研究了位于硅纳米线(SiNW)太阳能电池顶部的氢化非晶硅(a-Si:H)层(壳)的影响。通过光学反射和吸收特性来研究 a-Si:H/SiNWs 和 SiNWs 的光学性质。在存在 a-Si:H 壳的情况下,在光谱范围(250 至 1000nm)内实现了 5.2%的反射率,并且具有超过 87%的平均入射光吸收率。此外,太阳能电池的特性得到了显著改善,与平面 SiNW 太阳能电池相比,开路电压、短路电流和效率分别提高了 15%、12%和 37%。基于电流-电压测量和形态结果,我们表明 a-Si:H 壳可以钝化湿法刻蚀工艺产生的缺陷。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29cc/3829805/8bb3071e5f31/1556-276X-8-466-1.jpg

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