使用 MoS₂ 和氧化石墨烯混合物作为活性层的存储器件。
Memory devices using a mixture of MoS₂ and graphene oxide as the active layer.
机构信息
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
出版信息
Small. 2013 Mar 11;9(5):727-31. doi: 10.1002/smll.201201940.
PMID:23161780
Abstract
A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).
摘要
采用由二维 MoS₂ 和氧化石墨烯 (GO) 纳米片组成的混合薄膜来制备存储器件。MoS₂-GO 薄膜中的导电 MoS₂ 组分提高了薄膜的电导率，从而促进了 GO 中的氧迁移。基于 MoS₂-GO 薄膜的器件具有可重写、非易失性、电双稳开关特性，其开关电压低（≤1.5 V），导通/关断电流比高（≈10²）。
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