Kim Jin Mo, Hwang Sung Won
Micro LED Research Center, Korea Photonics Technology Institute, Gwangju 61007, Korea.
Department of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Korea.
Molecules. 2021 Nov 9;26(22):6758. doi: 10.3390/molecules26226758.
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3-0.6 wt % PVP-GQD, V changed from 2.27-2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.
我们研究了使用嵌入GQD层的还原氧化石墨烯（RGO）纳米片纳米复合材料制成的高柔性忆阻器。为了开发柔性电阻式随机存取存储器（RRAM）器件，研究了聚（4-乙烯基苯酚）：石墨烯量子点（PVP：GQD）复合材料与HfOx混合双层的电阻开关行为。基于石墨烯量子点（一种低维结构）设计了复合有源层，并将石墨烯量子点的异质有源层应用于界面缺陷结构以克服局限性。当PVP-GQD增加到0.3-0.6 wt%时，V从2.27-2.74 V变化。当对下电极施加负偏压时，电子穿过HfOx/ITO界面。此外，随着PVP-GQD浓度的增加，界面缺陷深度减小，并通过Al和HfOx/ITO证实了适当电学性能的重复性。低界面缺陷有助于Al离子向PVP GQD层和HfOx薄膜的电泳。局部电场增加，导致缺陷中导电细丝的断裂。
