The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods.

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La(0.7)Sr(0.3)MnO(3) (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I-V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I-V bipolar cycles.