Bosgra Jeroen, Zoethout Erwin, van der Eerden Ad M J, Verhoeven Jan, van de Kruijs Robbert W E, Yakshin Andrey E, Bijkerk Fred
Fundamental Research on Matter Institute, Dutch Institute for Fundamental Energy Research, Nieuwegein, The Netherlands.
Appl Opt. 2012 Dec 20;51(36):8541-8. doi: 10.1364/AO.51.008541.
We studied the structure and optical properties of B(4)C/Mo/Y/Si multilayer systems. Using extended x-ray absorption fine structure measurements at the Y and Mo K-edge, the structure of the subnanometer thick Y layer and the underlying Mo layer were analyzed. It was found that even a 0.2 nm thick Y layer significantly reduced silicon diffusion toward Mo, thus reducing Mo silicide formation. Hard x-ray reflectometry showed that the difference in average interface roughness of the B(4)C/Mo/Y/Si multilayer structure compared to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures was negligible. Soft x-ray reflectometry showed optical improvement of B(4)C/Mo/Y/Si with respect to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures.
我们研究了B(4)C/Mo/Y/Si多层系统的结构和光学性质。利用在Y和Mo K边的扩展X射线吸收精细结构测量,分析了亚纳米厚的Y层和其下的Mo层的结构。发现即使是0.2 nm厚的Y层也能显著减少硅向Mo的扩散,从而减少钼硅化物的形成。硬X射线反射测量表明,与Mo/Si和B(4)C/Mo/B(4)C/Si多层结构相比,B(4)C/Mo/Y/Si多层结构的平均界面粗糙度差异可忽略不计。软X射线反射测量表明,B(4)C/Mo/Y/Si相对于Mo/Si和B(4)C/Mo/B(4)C/Si多层结构在光学性能上有所改善。