Kondratenko V V, Pershin Y P, Poltseva O V, Fedorenko A I, Zubarev E N, Yulin S A, Kozhevnikov V, Sagitov S I, Chirkov V A, Levashov V E, Vinogradov A V
Appl Opt. 1993 Apr 1;32(10):1811-6. doi: 10.1364/AO.32.001811.
The thermal stability of Mo-Si multilayers prepared by magnetron sputtering is studied. It is found that degradation of x-ray reflectivity of Mo-Si multilayers under heat loading is connected with the roughening of Mo-Si interfaces and the formation of compounds Mo(x)Si(y),. To avoid these degradation mechanisms we fabricated and tested MoSi(2)-Si multilayers under heat loading. The MoSi(2)-Si multilayer appeared to be much more stable both in period and x-ray reflectivity because of thermodynamic equilibrium of the components MoSi(2) and Si at the interface. The working temperature of MoSi(2)-Si multilayers reaches 1000 K.
研究了通过磁控溅射制备的钼硅多层膜的热稳定性。发现钼硅多层膜在热负载下X射线反射率的降低与钼硅界面的粗糙度增加以及化合物Mo(x)Si(y)的形成有关。为避免这些退化机制，我们制备并测试了热负载下的MoSi₂-Si多层膜。由于界面处MoSi₂和Si组分的热力学平衡，MoSi₂-Si多层膜在周期和X射线反射率方面都显得更加稳定。MoSi₂-Si多层膜的工作温度可达1000K。
Zotero 插件