College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, NY 12203, USA.
Nanotechnology. 2013 Jan 25;24(3):035301. doi: 10.1088/0957-4484/24/3/035301. Epub 2012 Dec 21.
Direct-write three-dimensional nanolithography is demonstrated using cryogenic electron beam-induced deposition (EBID). Cryogenic cooling and an electron beam were used to condense and expose the precursor methylcyclopentadienyl(trimethyl)platinum (MeCpPtMe(3)). The exposure process was modeled by Monte Carlo simulations of electron-condensate interactions, which were used to develop two approaches for the fabrication of three-dimensional self-supporting structures with incorporated gaps. Vertical and lateral resolutions of approximately 150 and 22 nm are demonstrated, and underlying mechanisms that limit resolution and throughput are identified. Resolution can be traded off for condensate exposure efficiency, which is shown to be up to four orders of magnitude greater than that of conventional, room temperature EBID.
利用低温电子束诱导沉积（EBID）进行直写式三维纳米光刻。低温冷却和电子束被用来冷凝和暴露前驱体甲基环戊二烯基（三甲基）铂（MeCpPtMe（3））。通过对电子-凝聚物相互作用的蒙特卡罗模拟来模拟曝光过程，利用该模拟开发了两种方法来制造具有内置间隙的三维自支撑结构。证明了大约 150nm 和 22nm 的垂直和横向分辨率，并确定了限制分辨率和吞吐量的基本机制。分辨率可以与冷凝物曝光效率进行权衡，结果表明其比传统的室温 EBID 高四个数量级。
