Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
Nanoscale. 2013 Feb 7;5(3):1221-6. doi: 10.1039/c2nr33034b. Epub 2013 Jan 9.
A single-layer graphene is synthesized on Cu foil in the absence of H(2) flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H(2) flow, hydrogen species are produced during the methane decomposition process into their active species (CH(x<4)), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide a sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD.
采用等离子体增强化学气相沉积(PECVD)法,在无氢气流动的情况下,在 Cu 箔上合成单层石墨烯。在没有明确的氢气流动的情况下,在甲烷分解过程中产生的氢物种会变成其活性物种(CH(x<4)),并在等离子体的辅助下产生。值得注意的是,生长的早期阶段强烈依赖于等离子体功率。所得晶粒尺寸(成核密度)在 50 W 时达到最大值(最小值),当等离子体功率高于 120 W 时饱和,因为通过简单控制等离子体功率可以有效地调节氢气分压。拉曼光谱和输运测量表明,单独分解的甲烷就可以为 PECVD 高质量石墨烯合成提供足够数量的氢物种。