Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7, Canada.
Nanotechnology. 2013 Feb 1;24(4):045702. doi: 10.1088/0957-4484/24/4/045702. Epub 2013 Jan 8.
We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.
我们对包含嵌入 GaN 纳米线中的 InGaN 插入物的样品进行了室温时间分辨光致发光测量。衰减曲线揭示了非指数复合动力学，该动力学在长时间后演变为幂律。我们发现特征幂律指数随发射光子能量的增加而增加。数据根据涉及辐射态和亚稳态电荷分离态相互作用的模型进行了分析。我们的结果与模型之间的一致性表明，发射主要由自发形成于 InGaN 插入物内部的富 In 纳米团簇上的载流子局域化引起。
