Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-701, Republic of Korea.
Nanoscale Res Lett. 2013 Jan 15;8(1):28. doi: 10.1186/1556-276X-8-28.
We reported well-integrated zinc oxide (ZnO) nanorod arrays (NRAs) on conductive textiles (CTs) and their structural and optical properties. The integrated ZnO NRAs were synthesized by cathodic electrochemical deposition on the ZnO seed layer-coated CT substrate in ultrasonic bath. The ZnO NRAs were regularly and densely grown as well as vertically aligned on the overall surface of CT substrate, in comparison with the grown ZnO NRAs without ZnO seed layer or ultrasonication. Additionally, their morphologies and sizes can be efficiently controlled by changing the external cathodic voltage between the ZnO seed-coated CT substrate and the counter electrode. At an external cathodic voltage of -2 V, the photoluminescence property of ZnO NRAs was optimized with good crystallinity and high density.
我们报道了在导电纺织品（CT）上集成良好的氧化锌（ZnO）纳米棒阵列（NRAs）及其结构和光学性质。通过在超声浴中的 ZnO 种子层涂覆 CT 基底上进行阴极电化学沉积，合成了集成的 ZnO NRAs。与没有 ZnO 种子层或超声处理的 ZnO NRAs 相比，ZnO NRAs 在 CT 基底的整个表面上以规则且密集的方式生长，并垂直排列。此外，通过改变 ZnO 种子涂覆 CT 基底和对电极之间的外部阴极电压，可以有效地控制它们的形态和尺寸。在外部阴极电压为-2 V 时，ZnO NRAs 的光致发光性能得到了优化，具有良好的结晶度和高密度。
